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| 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 230 230 40 160 30 40 633.1 27 20 5 270 2.02 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=16A,L=4.09mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Theemal impedance' graph < Note *4:IF< -ID, -di/dt=50A/s,VCC= BVDSS,Tch< 150C = = kV/s VDS= 230V < kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=230V VGS=0V Tch=25C Tch=125C VDS=184V VGS=0V VGS=30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS=75V VGS=0V f=1MH VCC=180V ID=20A VGS=10V RGS=10 VCC=115V ID=40A VGS=10V IF=40A VGS=0V Tch=25C IF=40A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Min. 230 3.0 Typ. Max. 5.0 25 250 100 76 Units V V A nA m S pF 12 58 24 1880 2820 230 345 12 18 28 42 8.4 12.6 56 84 6 9 42.0 63.0 18.0 27.0 12.0 18.0 1.10 1.50 230 2.5 ns nC V ns C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 0.463 62 Units C/W C/W 1 2SK3870-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 400 100 90 80 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 10V 300 70 8V 60 PD [W] 200 ID [A] 50 40 7V 30 100 20 10 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 4 8 12 16 20 24 6.5V Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 0.25 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 0.25 VGS=6V 6.5V 7V 0.20 RDS(on) [ ] 0.20 RDS(on) [ ] 8V 0.15 0.15 max. 0.10 0.10 10V 20V 0.05 typ. 0.05 0.00 0 10 20 30 40 50 60 70 80 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3870-01 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg):ID=40A,Tch=25C 20 18 16 7.0 6.5 6.0 5.5 5.0 max. VGS(th) [V] 14 12 Vcc= 46V 115V 184V 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Tch [C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 1n Coss 10 C [F] 100p IF [A] 1 Crss 0.1 0.00 10p 1p -1 10 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A IAS=16A 600 500 10 2 td(off) IAS=24A t [ns] td(on) EAV [mJ] 400 300 IAS=40A 200 tf 10 1 tr 100 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3870-01 Safe operating area ID=f(VDS):Single Pulse,Tc=25C t= 1s FUJI POWER MOSFET 10 2 10s 10 1 D.C. 100s ID [A] 1ms 10 0 10ms 100ms 10 -1 10 0 10 1 10 2 10 3 VDS [V] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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